? 2010 ixys corporation, all rights reserved ds100228a(04/10) v dss = 150v i d25 = 160a r ds(on) 9.0m ? ? ? ? ? t rr 160ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c, r gs = 1m ? 150 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 160 a i dm t c = 25 c, pulse width limited by t jm 440 a i a t c = 25 c80a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss ,t j 175 c 15 v/ns p d t c = 25 c 880 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g IXFH160N15T2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250a 150 v v gs(th) v ds = v gs , i d = 1ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 10 a t j = 150 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 7.7 9.0 m ? trencht2 tm hiperfet tm power mosfet g = gate d = drain s = source tab = drain to-247 g s tab d features z international standard package z high current handling capability z fast intrinsic diode z dynamaic dv/dt rated z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFH160N15T2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 80 130 s c iss 15 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1120 pf c rss 113 pf t d(on) 37 ns t r 15 ns t d(off) 50 ns t f 26 ns q g(on) 253 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 67 nc q gd 73 nc r thjc 0.17 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 160 a i sm repetitive, pulse width limited by t jm 640 a v sd i f = 100a, v gs = 0v, note 1 1.4 v t rr 160 ns i rm 7.00 a q rm 0.32 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. i f = 80a, -di/dt = 100a/ s v r = 75v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 ? (external) e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2010 ixys corporation, all rights reserved IXFH160N15T2 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5v 6v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 360 02468101214 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5v 6v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 4 v 5 v 6 v fig. 4. r ds(on) normalized to i d = 80a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 160a i d = 80a fig. 5. r ds(on) normalized to i d = 80a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 40 80 120 160 200 240 280 320 360 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFH160N15T2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.03.54.04.55.05.56.06.57.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 q g - nanocoulombs v gs - volts v ds = 75v i d = 80a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1,000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse r ds ( on) limit dc 25s 10ms 1ms 100s
? 2010 ixys corporation, all rights reserved IXFH160N15T2 fig. 14. resistive turn-on rise time vs. drain current 12 14 16 18 20 22 80 90 100 110 120 130 140 150 160 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 2 ? , v gs = 10v v ds = 75v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 246810121416 r g - ohms t r - nanoseconds 20 40 60 80 100 120 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 80a i d = 160a fig. 16. resistive turn-off switching times vs. junction temperature 18 22 26 30 34 38 42 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 30 40 50 60 70 80 90 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 75v i d = 80a, 160a fig. 17. resistive turn-off switching times vs. drain current 22 24 26 28 30 32 34 80 90 100 110 120 130 140 150 160 i d - amperes t f - nanoseconds 35 45 55 65 75 85 95 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 75v t j = 25oc, 125oc fig. 13. resistive turn-on rise time vs. junction temperature 12 14 16 18 20 22 24 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? , v gs = 10v v ds = 75v i d = 160a i d = 80a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 2 4 6 8 10 12 14 16 r g - ohms t f - nanoseconds 50 75 100 125 150 175 200 225 250 275 300 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 160a i d = 80a
ixys reserves the right to change limits, test conditions, and dimensions. IXFH160N15T2 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref:f_160n15t2(7v)1-14-10-a
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